| Download | - View accepted manuscript: Monolithic integration of AlGaN/GaN HFET with MOS on silicon<111>substrates (PDF, 544 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1049/el.2010.3167 |
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| Author | Search for: Chyurlia, P. N.1; Search for: Semond, F.; Search for: Lester, T.1; Search for: Bardwell, J. A.1; Search for: Rolfe, S.1; Search for: Tang, H.1; Search for: Tarr, N. G. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon <111> substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon <111> substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built. |
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| Publication date | 2010-02-04 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17379823 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 37196b3c-a04d-42fb-b33f-d789a510f798 |
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| Record created | 2011-03-23 |
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| Record modified | 2020-04-17 |
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