| DOI | Resolve DOI: https://doi.org/10.1021/nn103042m |
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| Author | Search for: Pitters, Jason L.1; Search for: Dogel, Iana A.1; Search for: Wolkow, Robert A.1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Subject | Bandbending; Bond charges; Charge control; Contact regions; Nano scale; Near-contact regions; Scanning tunneling microscopes; Scanning tunneling spectroscopy; Schottky contacts; Si(100) surface; Sloping surfaces; Surface band bending; Surface dangling bonds; Titanium silicide; Nanostructured materials; Scanning tunneling microscopy; Semiconducting silicon compounds; Silicides; Titanium compounds; Dangling bonds |
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| Abstract | Titanium silicide (TiSi 2) nanoscale Schottky contacts were prepared on hydrogen-terminated n-type Si (100) surfaces. The Schottky contact created a region of upward band bending surrounding the TiSi 2 contacts. The surface band bending was observed as a sloping surface depression using the scanning tunneling microscope. Scanning tunneling spectroscopy measurements also show shifted I/V data consistent with upward band bending. Charge control of dangling bonds was accomplished through a distance relationship between the dangling bond and the TiSi 2 contact. The lowered chemical potential in the near contact region removes the ability of dangling bonds to become negatively charged while dangling bonds outside the close contact region remain fully charged. Methods to actively control dangling bond charge states are discussed. © 2011 American Chemical Society. |
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| Publication date | 2011-02-10 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271922 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 011d926b-6b0c-404a-a19c-b42eaf2ccda3 |
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| Record created | 2014-05-06 |
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| Record modified | 2020-04-21 |
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