Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates
Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates
| DOI | Resolve DOI: https://doi.org/10.1016/S0022-0248(02)01842-0 |
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| Author | Search for: 1; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
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| Format | Text, Article |
| Publication date | 2003 |
| In | |
| NPARC number | 12744460 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 0138e1f1-8dce-4bb5-a9d6-f5b8c550a66b |
| Record created | 2009-10-27 |
| Record modified | 2020-04-02 |
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