| DOI | Resolve DOI: https://doi.org/10.1088/0268-1242/10/1/007 |
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| Author | Search for: Lenchyshyn, L. C.1; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We demonstrate the detection of mid-wavelength (3-5 mu m) infrared radiation by intersubband transitions in InxGa1-xAs/Al0.45Ga0.55As multiple quantum well structures grown on GaAs substrates. The peak detector response is shifted from 4.8 to 4.3 mu m by increasing the indium fraction from x=0.05 to x=0.20, while simultaneously decreasing the well width to keep the first excited eigenstate near the top of the wells. These detectors can be combined in detector stacks with conventional long-wavelength (8-12 mu m) infrared quantum well detectors for multi-band imaging applications. |
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| Publication date | 1995 |
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| In | |
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| Language | English |
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| NPARC number | 12327336 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 01ec7b99-c94b-4b93-befd-860db5622e97 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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