On the electronic transport properties of amorphous (Si,Ge) alloys: charged scattering centers and compositional disorder
On the electronic transport properties of amorphous (Si,Ge) alloys: charged scattering centers and compositional disorder
| DOI | Resolve DOI: https://doi.org/10.1016/S0022-3093(02)00932-8 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 2002 |
| In | |
| NPARC number | 12744801 |
| Export citation | Export as RIS |
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| Record identifier | 02700805-9506-499a-829f-d0cd6a05aec1 |
| Record created | 2009-10-27 |
| Record modified | 2020-03-30 |
- Date modified: