| DOI | Resolve DOI: https://doi.org/10.1063/1.1459489 |
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| Author | Search for: Ciorga, M.1; Search for: Pioro-Ladriere, M.1; Search for: Zawadzki, Piotr1; Search for: Hawrylak, Pawel1; Search for: Sachrajda, A. S.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. |
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| Publication date | 2002 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12744640 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 027fc2f7-0499-4f1e-aa37-b0f146e8436a |
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| Record created | 2009-10-27 |
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| Record modified | 2023-05-10 |
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