Progress and Challenges in Growth of High-Mobility GaN Epilayers and AlGaN/GaN HFET Strcutures by Ammonia- MBE Technique
Progress and Challenges in Growth of High-Mobility GaN Epilayers and AlGaN/GaN HFET Strcutures by Ammonia- MBE Technique
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Format | Text, Article |
Publication date | 2000 |
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NPARC number | 12337896 |
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Record identifier | 0310d636-bc3f-4fe1-867e-5b3ed5869315 |
Record created | 2009-09-10 |
Record modified | 2020-03-26 |
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