Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (0 0 1) using an Ar/N2 RF plasma

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DOIResolve DOI: https://doi.org/10.1016/S0022-0248(02)01422-7
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  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. National Institute for Nanotechnology
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NPARC number12743807
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Record identifier03422d5e-d054-47c2-93d2-193bb1de4fc4
Record created2009-10-27
Record modified2020-03-30
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