On hot-carrier induced degradation, temperature, bias and emitter geometry dependence of the dc characteristics of polysilicon-emitter bipolar transistors

Author	Search for: Sheng, S.; Search for: McAlister, Sean¹; Search for: Storey, Craig¹; Search for: Lee, L-S; Search for: Hwang, H.
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	EDMO2002 - 10th International Symposium on Electron Devices for Microwave & Optoelectronic Alications, November 2002, Manchester, UK
NPARC number	12346431
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Record identifier	03b4aa1c-9eef-4240-92f7-1ada6b02eccd
Record created	2009-09-17
Record modified	2020-04-16