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Device level characterization for energy bandgap of strain-relaxed SiGe and Oxide/SiGe barrier height

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/1.1705663
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Journal of the Electrochemical Society 151, no. 6 (2004): G377–G379.
NPARC number12744652
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Record identifier03cf058c-be6e-4083-bf4a-455a1e3edfd1
Record created2009-10-27
Record modified2020-04-17
Date modified: