| DOI | Resolve DOI: https://doi.org/10.1149/1.2764459 |
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| Author | Search for: Chen, J. -H.; Search for: Lei, T. -F.; Search for: Landheer, Dolf1; Search for: Wu, X.1; Search for: Liu, J.; Search for: Chao, T. -S. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9–3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850°C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 X 1011 cm−2, and a stored charge density of 4.1 X 1012 cm−2 (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23–32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. |
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| Publication date | 2007 |
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| In | |
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| NPARC number | 12744828 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 03f66d8e-d8a9-4e01-9485-a0ccf3b7e852 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-05-10 |
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