Carrier recombination dynamics in Ga₀.₅₁In₀.₄₉P double-heterostructures up to 500 K

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/1361-6641/ab708e
AuthorSearch for: 1ORCID identifier: https://orcid.org/0000-0002-1791-2140; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
Affiliation
  1. National Research Council Canada. Advanced Electronics and Photonics
FormatText, Article
SubjectIII–V semiconductors; double-heterostructures; photoluminescence; minority carrier recombination lifetime; interface recombination velocity
Abstract
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PublisherIOP Publishing
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LanguageEnglish
Peer reviewedYes
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Record identifier0400a210-1b24-4c22-834e-84d06fb02992
Record created2020-07-21
Record modified2021-09-17
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