| Download | - View accepted manuscript: Annealing effects on the chemical configuration of uncapped and (poly-Si)-capped HfOxNy film deposited on Si(001) (PDF, 877 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1149/1.1939087 |
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| Author | Search for: Couillard, M.; Search for: Lee, M. -S.; Search for: Landheer, D.1; Search for: Wu, X.1; Search for: Botton, G. A. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | hafnium compounds; silicon compounds; transmission electron microscopy; thermal stability |
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| Abstract | We use spatially resolved spectroscopy in a scanning transmission electron microscope to study the thermal stability of the HfOxNy/Si(001) system with and without an in situ capping layer of silicon. The films were deposited by metallorganic chemical vapor deposition using the amide precursor tetrakis(diethylamido)hafnium with NO as the oxidant. A SiOxNy interfacial layer (∼1.8nm) is observed at the HfOxNy/substrate interface for films directly exposed to air. In addition, the N loss in the HfOxNy film for the uncapped sample is significant. In contrast, in situ capping is found to reduce the thickness of the interfacial layer and to keep the N content in the final dielectric film high. The capped HfOxNy films are quasi-amorphous, whereas uncapped films are polycrystalline following exposure to air. Oxinitridation at both interfaces is observed following a rapid thermal annealing process (900°C in N2 for 30s ) of the capped HfOxNy film. However, the interfacial layers remain thin (∼1nm) and a significant amount of N is present in the HfOxNy film. The rapid thermal annealing leads to the partial crystallization of the HfOxNy film and the Si capping layer. No Hf silicate is detected on a scale of ∼6Å in the electron energy loss spectroscopy analysis. |
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| Publication date | 2005 |
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| In | |
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| Language | English |
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| NPARC number | 12744780 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 049edb26-8881-4602-9212-cab32a256223 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-07 |
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