| DOI | Resolve DOI: https://doi.org/10.1117/12.470609 |
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| Author | Search for: Wrobel, Jerzy M.; Search for: Placzek-Popko, Ewa; Search for: Dubowski, Jan J.1; Search for: Tang, Haipeng1; Search for: Webb, James B.1 |
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| Affiliation | - National Research Council Canada
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| Format | Text, Article |
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| Conference | High-Power Lasers and Applications, 2002, San Jose, California, United States |
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| Abstract | Photoluminescence analysis has been implemented to investigate the crystalline properties of Gallium Nitride layers ablated with an XeCl excimer laser. The measurements were carried out on craters up to 1 micrometers deep, which corresponded to almost half the thickness of the deposited film. The craters were etched in an air environment with laser fluences in the range of 99-231 mJ/cm2. In the 350-1200 nm spectral range, the near-band-edge emission, and the donor-acceptor pair recombination were identified. All spectra were dominated by the excitonic recombination. The analysis revealed that during the ablation, the full width at half maximum of the donor-bound luminescence line remained almost independent of both the depth of the crater and of the laser fluence. Also, the donor-acceptor pari recombination, which manifests its presence through a weak yellow luminescence observed in the vicinity of the 600 nm wavelength, has been consistently observed in the spectra. A relative decrease in the excitonic emission indicated that a thin layer of altered material with lower crystalline quality was formed at the surface of the ablated material |
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| Publication date | 2002-06-18 |
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| Publisher | SPIE |
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| In | |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339301 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 04abc3db-7c05-4cde-af2a-9662103ce645 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-04-06 |
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