| DOI | Resolve DOI: https://doi.org/10.1063/1.360763 |
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| Author | Search for: Dubowski, J.J.1; Search for: Rosenquist, B.1; Search for: Lockwood, D.1; Search for: Labbe, H.1; Search for: Roth, A.1; Search for: Lacelle, C.1; Search for: Davies, M.1; Search for: Barber, R.1; Search for: Mason, B.1; Search for: Sproule, G1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | AES; ATOMIC FORCE MICROSCOPY; DAMAGE; ETCHING; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION BEAMS; LASER RADIATION; MULTILAYERS; RAMAN SPECTRA |
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| Abstract | Etching of a chemical-beam-epitaxy-grown InP/InGaAs multilayer structure with reactive ion etching (RIE) and laser-assisted dry etching ablation (LADEA) is carried out in order to evaluate the extent of the damage induced by these two etching methods. Micro-Raman spectroscopy indicates a systematic broadening of the phonon lines as a function of depth of a RIE fabricated crater. In contrast, LADEA which is based on the application of an excimer laser for the removal of the products of chemical reaction, shows no measurable changes in the phonon line widths when compared to as-grown material. The results suggest that LADEA has potential for the photoresistless fabrication of damage free microstructures. |
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| Publication date | 1995 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12327308 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 06e83d00-7373-4328-99aa-d2728b62725f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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