Robust silicon waveguide polarization rotator with an amorphous silicon overlayer

From National Research Council Canada

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DOIResolve DOI: https://doi.org/10.1109/JPHOT.2014.2306827
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  1. National Research Council Canada. Information and Communication Technologies
FormatText
TypeArticle
Journal titleIEEE Photonics Journal
ISSN1943-0655
Volume6
Issue2
Pages1–9
SubjectSilicon waveguide; Polarization rotation; Amorphous silicon
Abstract
We propose a robust polarization rotator based on the mode-evolution mechanism. The polarization rotation in a silicon wire waveguide is achieved by forming an amorphous silicon (a-Si) overlayer and an SiO₂ spacer on top of the waveguide. A strip pattern of a constant width is designed to be etched through the overlayer at a specific angle with respect to the Si waveguide. The asymmetry in the a-Si overlayer affects the waveguide mode by rotating the modal axis. This polarization rotator design is amenable to comparatively simple fabrication compatible with standard silicon photonic processing for integration. The length of the rotation section is 17 μm, and the broadband operation is achieved with a rotation efficiency higher than 90% for a wavelength range exceeding 135 nm. A maximum polarization rotation efficiency of 99.5% is predicted by calculation.
Publication date
PublisherIEEE
Terms of use
LanguageEnglish
Peer reviewedYes
NPARC number23000127
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Record identifier074e2b6a-a806-4ef9-bedd-b4de6211f546
Record created2016-06-06
Record modified2019-03-12
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