Download | - View full text: Robust silicon waveguide polarization rotator with an amorphous silicon overlayer (PDF, 1 MB)
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DOI | Resolve DOI: https://doi.org/10.1109/JPHOT.2014.2306827 |
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Author | Search for: Xiong, Yule1 ; Search for: Xu, Dan-Xia1 ; Search for: Schmid, Jens H.1 ; Search for: Cheben, Pavel1 ; Search for: Janz, Siegfried1 ; Search for: Ye, Winnie N. |
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Name affiliation | - National Research Council Canada. Information and Communication Technologies
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Format | Text |
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Type | Article |
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Journal title | IEEE Photonics Journal |
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ISSN | 1943-0655 |
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Volume | 6 |
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Issue | 2 |
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Pages | 1–9 |
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Subject | Silicon waveguide; Polarization rotation; Amorphous silicon |
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Abstract | We propose a robust polarization rotator based on the mode-evolution mechanism.
The polarization rotation in a silicon wire waveguide is achieved by forming an amorphous
silicon (a-Si) overlayer and an SiO₂ spacer on top of the waveguide. A strip pattern of a
constant width is designed to be etched through the overlayer at a specific angle with respect
to the Si waveguide. The asymmetry in the a-Si overlayer affects the waveguide mode by
rotating the modal axis. This polarization rotator design is amenable to comparatively simple
fabrication compatible with standard silicon photonic processing for integration. The length of
the rotation section is 17 μm, and the broadband operation is achieved with a rotation efficiency
higher than 90% for a wavelength range exceeding 135 nm. A maximum polarization
rotation efficiency of 99.5% is predicted by calculation. |
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Publication date | 2014-02-15 |
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Publisher | IEEE |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 23000127 |
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Export citation | Export as RIS |
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Report a correction | Report a correction |
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Record identifier | 074e2b6a-a806-4ef9-bedd-b4de6211f546 | Record created | 2016-06-06 |
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Record modified | 2019-03-12 |
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