Robust silicon waveguide polarization rotator with an amorphous silicon overlayer

From National Research Council Canada

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DOI	Resolve DOI: https://doi.org/10.1109/JPHOT.2014.2306827
Author	Search for: Xiong, Yule¹; Search for: Xu, Dan-Xia¹; Search for: Schmid, Jens H.¹; Search for: Cheben, Pavel¹ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for: Janz, Siegfried¹; Search for: Ye, Winnie N.
Name affiliation	National Research Council of Canada. Information and Communication Technologies
Format	Text, Article
Journal title	IEEE Photonics Journal
ISSN	1943-0655
Volume	6
Issue	2
Pages	1–9
Subject	silicon waveguide; polarization rotation; amorphous silicon
Abstract	We propose a robust polarization rotator based on the mode-evolution mechanism. The polarization rotation in a silicon wire waveguide is achieved by forming an amorphous silicon (a-Si) overlayer and an SiO₂ spacer on top of the waveguide. A strip pattern of a constant width is designed to be etched through the overlayer at a specific angle with respect to the Si waveguide. The asymmetry in the a-Si overlayer affects the waveguide mode by rotating the modal axis. This polarization rotator design is amenable to comparatively simple fabrication compatible with standard silicon photonic processing for integration. The length of the rotation section is 17 μm, and the broadband operation is achieved with a rotation efficiency higher than 90% for a wavelength range exceeding 135 nm. A maximum polarization rotation efficiency of 99.5% is predicted by calculation.
Publication date	2014-02-15
Publisher	IEEE
Language	English
Peer reviewed	Yes
NPARC number	23000127
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Record identifier	074e2b6a-a806-4ef9-bedd-b4de6211f546
Record created	2016-06-06
Record modified	2020-06-02

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Date modified:: 2020-10-23