| DOI | Resolve DOI: https://doi.org/10.1063/1.115198 |
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| Author | Search for: Lu, Z. H.1; Search for: Chatenoud, F.1; Search for: Dion, M. M.1; Search for: Graham, M. J.1; Search for: Ruda, H. E.; Search for: Koutzarov, I.; Search for: Liu, Q.; Search for: Mitchell, C. E. J.; Search for: Hill, I. G.; Search for: McLean, A. B. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | CHEMICAL BONDS; CHLORINATION; ENERGY GAP; ETCHING; GALLIUM ARSENIDES; PASSIVATION; PHOTOEMISSION; SURFACE STATES; SURFACE TREATMENTS; XANES |
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| Abstract | It is found that an ordered and air-stable GaAs(111)A舑(1 × 1)舑Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization-dependent Cl K-edge x-ray absorption near-edge structure and x-ray photoelectron spectroscopy studies showed that the surface is terminated with Ga舑Cl bonds oriented along the surface normal. Low-energy electron diffraction studies showed a bulklike (1 × 1) structure on the Cl-terminated GaAs(111)A surface. The Cl termination eliminates surface band-gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near-band radiative emission rate corresponding to reduction in the occupied surface band-gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements. |
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| Publication date | 1995-07-31 |
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| In | |
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| Language | English |
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| NPARC number | 12328630 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 09577a29-9167-4785-9c80-541886b4a816 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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