| Abstract | Following a study of implantation enhanced interdiffusion of InGaAs/InP multiple quantum well (MQW) structures by cross-sectional scanning tunneling microscopy (XSTM), the techniques of low temperature photoluminescence spectroscopy, high-resolution x-ray diffraction (HRXRD), and grazing incidence x-ray analysis (GIXA) are used to independently investigate the suitability of a square well model for the interdiffused MQW profiles, and the observed dependence of strain development as a function of the implanted ion range relative to the MQW stacks. In agreement with previous XSTM findings, when ions are implanted through the MQWs, HRXRD measurements indicate equivalent extents of interdiffusion occurring on both sublattices, while GIXA measurements further indicate the compositional profiles to be non-Fickian and compatible with uniformly broadened square well distributions. Following shallow ion implants (where ions are deposited between the MQWs and the sample surface), (004) HRXRD measurements indicate preferential group V interdiffusion. Dynamical simulations of the superlattice envelope in the (004) HRXRD rocking curves show the compositional profiles to be non-Fickian and compatible with a square well model for the broadened compositional profiles. Additional analysis of the (001) bilayer spacing from previously published XSTM linescan data for this structure is also consistent with this finding. Results of a preliminary photoluminescence and HRXRD investigation of disordering induced by indium implants and the effects of extended annealing on a series of MQW samples (with and without implantation) are presented. Implications for the implantation enhancement of interdiffusion in the InGaAs/InP material system are discussed. The interpretation of quantum well interdiffusion experiments in this material system in terms of Fickian diffusion models warrants revision in light of the present findings. |
|---|
