| DOI | Resolve DOI: https://doi.org/10.1016/S0026-2692(03)00037-5 |
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| Author | Search for: Allen, C. Nì.1; Search for: Poole, P. J.1; Search for: Marshall, P.1; Search for: Raymond, S.1; Search for: Fafard, S. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 4th International Conference on Low-Dimensional Structures and Devices, 8-13 December 2002, Fortaleza, Ceara, Brazil |
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| Abstract | Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP were grown on (100) InP substrate to form a laser diode. Two methods were used to achieve tuning: changing the laser cavity length or varying the temperature. Stimulated emission between ∼1.51 and ∼1.64 μm was observed depending on the cavity length and the QD barrier height. The threshold current density was decreased for longer cavities to a value as low as 49 A/cm2 at 77 K. The relation between temperature and lasing peak wavelength was measured to be ∼0.21 nm/K leading to room temperature lasing at ∼1.61 μm. |
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| Publication date | 2003 |
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| In | |
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| Language | English |
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| NPARC number | 12744511 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 0ac4e585-065f-4cb5-a780-df9d0faf40b9 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-02 |
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