Optimized growth of GaN/AlGaN HFETs on sapphire and SiC substrates by ammonia- MBE

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
ConferenceJuna 10-14, 2002
Publication date
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NPARC number12333696
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Record identifier0f18d30d-2f94-4d2a-bb2a-27cf92b05457
Record created2009-09-10
Record modified2020-03-30
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