| Alternative title | Electron tomography of Si and Er particles in SiOx film without missing wedge |
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| DOI | Resolve DOI: https://doi.org/10.1017/S143192761006280X |
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| Author | Search for: Li, Peng1; Search for: Concepcion, Paul1; Search for: Wang, Xiongyao1; Search for: Malac, Marek1; Search for: Meldrum, Al1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Conference | Microscopy and Microanalysis 2010, August 1–5, 2010, Portland, Oregon |
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| Abstract | Electron tomography (ET) in a TEM has been widely used to characterize materials at sub-10 nm spatial resolution. As any technique, ET has its limitations. One of the most serious problems is the “missing wedge” in Fourier space that arises from limited tilt angle range in a TEM. The most direct way to solve the problem is to tilt of sample over the full tilt range (-90° to 90°). The full tilt range ET was reported for example by Jinnai et. al., who analyzed polymer samples with metal nanoparticles. Here we report full tilt chemically selective ET of sub-10 nm Er clusters and Si crystallites embedded in SiOₓ matrix. The studied material is a possible candidate for fabrication of Sibased opto-electronic devices. |
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| Publication date | 2010-07-01 |
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| Publisher | Cambridge University Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 11976cdf-3393-4e33-b8ea-e43b4f6760ee |
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| Record created | 2020-05-29 |
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| Record modified | 2020-05-29 |
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