DOI | Resolve DOI: https://doi.org/10.1557/PROC-399-325 |
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Author | Search for: Perovic, D. D.; Search for: Bahierathan, B.; Search for: Houghton, D. C.1; Search for: Lafontaine, H.1; Search for: Baribeau, J.-M.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Conference | 1995 MRS Fall Meeting: Symposium D: Evolution of epitaxial structure and morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A. |
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Abstract | Two competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSi1-x/Si (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSi1-x/Si (x<0.5) structures grown by UHVCVD and MBE at relatively higher temperatures. A theoretical model has been used to model the critical thickness for surface wave generation. The conditions governing the interplay between dislocation formation and surface buckling are described in terms of a "morphological instability diagram". |
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Publication date | 1996 |
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Series | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 12338541 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 129e27b3-fa6c-4072-8efb-0b0d612c2424 |
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Record created | 2009-09-10 |
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Record modified | 2020-03-20 |
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