| DOI | Resolve DOI: https://doi.org/10.1116/1.3694010 |
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| Author | Search for: Pitters, J.L.1; Search for: Piva, P.G.; Search for: Wolkow, R.A.1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Subject | Charging characteristics; Dopant atoms; Dopant concentrations; Dopant state; Doped sample; Hydrogen-terminated silicon; Hydrogen-terminated surfaces; Imaging characteristics; Near surface regions; Near-surface; Silicon (100); Ultrahigh vacuum scanning tunneling microscopies; Arsenic; Carrier concentration; Dangling bonds; Electric charge; Hydrogen; Scanning tunneling microscopy; Semiconductor doping |
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| Abstract | Degenerately doped (arsenic) n-type hydrogen terminated silicon (100) samples were prepared using various heat treatments for ultrahigh vacuum scanning tunneling microscopy (STM) and spectroscopy (STS) analysis. Samples heat treated to 1050 C were found to have a consistent level of doping throughout the bulk and near surface regions. STS revealed tunneling through dopant states consistent with degenerately doped samples. SIMS profiling and HREELS measurements confirmed dopant and carrier concentrations, respectively. Samples heated to 1250 C were found to have a reduced concentration of dopants in the near surface region. STS measurements showed shifted I/V curves and the loss of tunneling through dopant states in the band gap, indicating reduced dopant concentrations. Observations were confirmed by SIMS and HREELS where depleted dopants and reduced carrier concentrations were measured. The effect of the varying surface dopant concentrations on the STM imaging characteristics of dangling bonds on hydrogen terminated surfaces was also investigated. Understanding the effect of thermal processing on near surface dopant atom concentrations will permit better control over equilibrium charge occupation and charging characteristics of dangling bond midgap states on H:silicon. © 2012 American Vacuum Society. |
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| Publication date | 2012 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269460 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 16a1a2cb-22ae-494c-ae5b-c21128912fa5 |
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| Record created | 2013-12-12 |
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| Record modified | 2020-04-21 |
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