| DOI | Resolve DOI: https://doi.org/10.1063/1.358456 |
|---|
| Author | Search for: McAlister, Sean1; Search for: McKinnon, W1; Search for: Abid, Z.; Search for: Guzzo, Eddy1 |
|---|
| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | BIPOLAR TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOT ELECTRONS; HYSTERESIS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; SWITCHING; TEMPERATURE RANGE 65273 K |
|---|
| Abstract | The switching behavior of a composite-collector InP/InGaAs heterojunction bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises from the underlying S-shaped negative differential conductivity associated with the hot-electron transport of electrons across the heterojunction barrier in the collector structure of such transistors. |
|---|
| Publication date | 1994 |
|---|
| In | |
|---|
| NPARC number | 12327130 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 174127f5-2ab9-4d06-93dd-c81f179f2b06 |
|---|
| Record created | 2009-09-10 |
|---|
| Record modified | 2020-04-27 |
|---|
