DOI | Resolve DOI: https://doi.org/10.1063/1.358456 |
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Author | Search for: McAlister, Sean1; Search for: McKinnon, W1; Search for: Abid, Z.; Search for: Guzzo, Eddy1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Subject | BIPOLAR TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOT ELECTRONS; HYSTERESIS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; SWITCHING; TEMPERATURE RANGE 65273 K |
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Abstract | The switching behavior of a composite-collector InP/InGaAs heterojunction bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises from the underlying S-shaped negative differential conductivity associated with the hot-electron transport of electrons across the heterojunction barrier in the collector structure of such transistors. |
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Publication date | 1994 |
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In | |
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NPARC number | 12327130 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 174127f5-2ab9-4d06-93dd-c81f179f2b06 |
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Record created | 2009-09-10 |
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Record modified | 2020-04-27 |
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