Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process

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  1. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
Subjectselective epitaxy; metalorganic vapor phase epitaxy; phosphides; semiconducting III-V materials; avalanche photodiodes
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Peer reviewedYes
NPARC number23002183
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Record identifier179353aa-1332-4122-b610-a8e0a60afa5f
Record created2017-08-30
Record modified2020-03-16
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