| DOI | Resolve DOI: https://doi.org/10.1063/1.121151 |
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| Author | Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | conduction bands; gallium arsenide; III-V semiconductors; interface states; light polarisation; photodetectors; semiconductor quantum wells |
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| Abstract | Using GaAs based quantum well infrared photodetectors (QWIPs) with either GaAs or InGaAs wells, we experimentally investigate the accuracy of the polarization selection rule for conduction band intersubband transitions. We employ a device structure and a light coupling geometry where the parasitic light scattering is negligible. The experiments imply that the selection rule is followed to an accuracy of 0.2% for a 8.1 μm QWIP with GaAs wells; this degrades to 3% for a 4.6 μm QWIP with In0.1Ga0.9As wells. |
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| Publication date | 1998-04-06 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12327494 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 23b15a4c-863f-4130-abd7-f59c36567a85 |
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| Record created | 2009-09-10 |
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| Record modified | 2023-05-10 |
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