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Effect of template morphology on the efficiency of InGaN/GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.1884745
AuthorSearch for: 1; Search for: 1; Search for: ; Search for: 1; Search for: 2
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Applied Physics Letters 86, no. 12 (2005): 121110–.
LanguageEnglish
Peer reviewedYes
NPARC number12744109
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Record identifier243d40ba-2ed0-4f56-80d2-ca53b0735cc8
Record created2009-10-27
Record modified2023-05-10
Date modified: