Intermediate range chemical ordering in amorphous and liquid water, Si, and Ge

From National Research Council Canada

DOI	Resolve DOI: https://doi.org/10.1103/PhysRevB.72.132201
Author	Search for: Benmore, C. J.; Search for: Hart, R. T.; Search for: Mei, Q.; Search for: Price, D. L.; Search for: Yarger, J.; Search for: Tulk, C. A.; Search for: Klug, D. D.¹
Affiliation	National Research Council Canada. NRC Steacie Institute for Molecular Sciences
Format	Text, Article
Subject	amorphous semiconductors; amorphous state; density; elemental semiconductors; germanium; interstitials; liquid semiconductors; liquid structure; neutron diffraction; noncrystalline structure; silicon; water; X-ray diffraction
Abstract	Neutron and x-ray diffraction data for low, high, and very high density amorphous ice and liquid water, silicon, and germanium have been compared in terms of the first sharp diffraction peak in the structure factor and at the radial distribution function level. The low and high density forms of H2O, Si, and Ge are shown to have very similar structures if the contributions from the hydrogen correlations in water are neglected. The very high density amorphous ice form is shown to be structurally analogous to recently reported high pressure liquid forms of Si and Ge, although there are slight differences in the way interstitial atoms or molecules are pushed into the first coordination shell.
Publication date	2005-10-04
In	Physical Review. B, Condensed Matter and Materials Physics 72, no. 13 (4 October 2005): 132201-1–132201-4.
Language	English
NPARC number	12327321
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Record identifier	2e44808b-8ea3-407a-af69-387cb5bc21ec
Record created	2009-09-10
Record modified	2020-04-07

Date modified:: 2026-01-14