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Current gain degradation in SiGe HBTs by hot carriers

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.1503789
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology B 20, no. 5 (2002): 1961–1966.
NPARC number12744495
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Record identifier2eed0044-2e99-47ee-935e-b8aa4fb5c01a
Record created2009-10-27
Record modified2020-03-30
Date modified: