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Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/LED.2008.2010416
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • IEEE Electron Device Letters 30, no. 2 (2009): 133–135.
LanguageEnglish
Peer reviewedYes
NPARC number12441155
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Record identifier2f301d94-c6d5-4160-8c82-01257f7d2dfe
Record created2009-09-25
Record modified2023-04-19
Date modified: