Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.sse.2004.05.033
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Institute for National Measurement Standards
FormatText, Article
ConferenceInternational Semiconductor Device Research Symposium 2003 (ISDRS '03), 10-12 December 2003, Washington, D.C., USA
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LanguageEnglish
NRC numberNRC-INMS-784
NPARC number8899116
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Record identifier2ffbd289-4f54-421c-939c-dfbcba30b8d5
Record created2009-04-22
Record modified2020-04-17
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