| DOI | Resolve DOI: https://doi.org/10.1063/1.114964 |
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| Author | Search for: Peters, C. J.; Search for: Noël, J. P.1; Search for: Xu, D. X.1; Search for: Buchanan, M.1; Search for: Du, J.; Search for: Tarr, N. G. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | ANNEALING; ARSENIC ADDITIONS; CARRIER LIFETIME; CRYSTAL DEFECTS; DAMAGE; ION IMPLANTATION; MINORITY CARRIERS; MOLECULAR BEAM EPITAXY; SILICON |
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| Abstract | The residual ion damage due to low-energy ion implantation during molecular beam epitaxy growth was investigated by measuring the minority carrier lifetime in the base of a silicon bipolar transistor. The base was doped with As+ ions at 200 eV to a concentration of 1019 cm−3. Three samples were grown at temperatures of 500, 650, and 800 °C. The 500 °C sample had a minority carrier lifetime in the base ∼1/6 that of the samples grown at the higher temperatures. On annealing at 650 °C the lifetimes of all samples were essentially equal. The results indicate that at this dopant concentration the collision cascades caused by ion bombardment do not overlap. |
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| Publication date | 1995-08-14 |
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| In | |
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| Language | English |
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| NPARC number | 12329065 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 31f3618a-9b55-4dbb-bef6-d04247bb826d |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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