Photoluminescence studies of Si (100) doped with low-energy (1000 eV) As+ ions during molecular beam epitaxy
Photoluminescence studies of Si (100) doped with low-energy (1000 eV) As+ ions during molecular beam epitaxy
| DOI | Resolve DOI: https://doi.org/10.1063/1.102303 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1989 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1131 |
| NPARC number | 8898518 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 328762bc-f7b0-4867-b518-ba623d27cf5e |
| Record created | 2009-04-22 |
| Record modified | 2020-03-17 |
- Date modified: