Novel SiO2/AlN/HfAlO/IrO2 Memory with Fast Erase, Large ÄVth, Fast Erase and Good Retention
Novel SiO2/AlN/HfAlO/IrO2 Memory with Fast Erase, Large ÄVth, Fast Erase and Good Retention
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| Format | Text, Article |
| Conference | Symposium on VLSI Technology, 2005 |
| NPARC number | 12346663 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 329ce583-33f4-42f9-8a7d-d1413d861a08 |
| Record created | 2009-09-17 |
| Record modified | 2020-04-16 |
- Date modified: