| Download | - View final version: Electronic structures of atomic silicon dimer wires as a function of length (PDF, 1.7 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1088/1361-6528/adafae |
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| Author | Search for: Altincicek, Furkan M.ORCID identifier: https://orcid.org/0000-0003-0444-8200; Search for: Livadaru, Lucian; Search for: Leon, Christopher C.ORCID identifier: https://orcid.org/0000-0003-4132-4645; Search for: Chutora, TarasORCID identifier: https://orcid.org/0000-0002-0927-5655; Search for: Yuan, MaxORCID identifier: https://orcid.org/0009-0003-1765-3606; Search for: Achal, RoshanORCID identifier: https://orcid.org/0000-0003-4879-3508; Search for: Croshaw, JeremiahORCID identifier: https://orcid.org/0000-0001-9164-1556; Search for: Pitters, Jason1ORCID identifier: https://orcid.org/0000-0002-5103-2980; Search for: Wolkow, RobertORCID identifier: https://orcid.org/0000-0001-7850-0548 |
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| Affiliation | - National Research Council Canada. Quantum and Nanotechnologies
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| Funder | Search for: Alberta Innovates Technology Futures; Search for: National Research Council Canada; Search for: Digital Research Alliance of Canada; Search for: Natural Sciences and Engineering Research Council of Canada |
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| Format | Text, Article |
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| Subject | silicon; dangling bond; semiconductor; atomic wire; STM; DFT; quantum confinement |
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| Abstract | Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1–5 dimers were intentionally fabricated and characterized by STM techniques combined with density functional theory to provide detailed insights into geometric and electronic structure. Structural and dynamic qualities displayed by short wires were shown to be similar to the characteristics of a relatively long 37 dimer wire. Rather than adding two states into the band gap, experiment and theory reveal that each dimer adds one empty state into the gap and one filled state into the valence bands. Coupling among these states provides a conduction pathway with small bulk coupling. |
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| Publication date | 2025-02-17 |
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| Publisher | IOP |
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| Licence | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 34a9d416-e0cf-454b-88bb-bf727b1fa37d |
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| Record created | 2025-05-29 |
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| Record modified | 2025-11-03 |
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