| DOI | Resolve DOI: https://doi.org/10.1117/12.883661 |
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| Author | Search for: Knap, W.; Search for: Teppe, F.; Search for: Consejo, C.; Search for: Chenaud, B.; Search for: Torres, J.; Search for: Solignac, P.; Search for: Wasilewski, Z.R.1; Search for: Zholudev, M.; Search for: Dyakonova, N.; Search for: Coquillat, D.; Search for: Buzatu, P.; Search for: El Fatimy, A.; Search for: Schuster, F.; Search for: Videlier, H.; Search for: Sakowicz, M.; Search for: Giffard, B.; Search for: Skotnicki, T.; Search for: Palma, F. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, April 25-26, 2011, Orlando, FL, USA |
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| Subject | Low costs; Silicon Technologies; Terahertz detection; Terahertz detectors; THz quantum cascade lasers; MESFET devices; Quantum cascade lasers; Detectors |
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| Abstract | In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers. © 2010 SPIE. |
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| Publication date | 2011 |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271557 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 351515e8-d592-4f5c-8adb-536eec0d99c6 |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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