| DOI | Resolve DOI: https://doi.org/10.1016/0030-4018(76)90316-3 |
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| Author | Search for: Alcock, A. J.1; Search for: Corkum, P. B.1; Search for: James, D. J.1; Search for: Leopold, K. E.1; Search for: Samson, J. C.1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Subject | Lasers, carbon dioxide |
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| Abstract | Reflection switching of high power, 10 μm radiation by optically induced carriers in a semiconductor has been achieved by irradiating germanium with 3 ns pulses of 1.06 μm radiation. This has permitted the selection of single mode-locked pulses of 10 μm radiation with energies in the 1-2 joule range. |
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| Publication date | 1976 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276180 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 376de6a5-4475-4239-bb67-e73d4058b6ed |
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| Record created | 2015-09-28 |
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| Record modified | 2020-03-13 |
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