| DOI | Resolve DOI: https://doi.org/10.1051/jp4:19972158 |
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| Author | Search for: Naftel, S. J.; Search for: Bzowski, A.; Search for: Sham, T. K.; Search for: Xu, D.-X.1; Search for: Das, S. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 9th International Conference on X-ray Absorption Fine Structure : 26-30 August 1996, Grenoble, France |
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| Abstract | Pt-Si thin films with the thickness of several hundred Å prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption fine structure spectroscopy at the Pt M3,2 edge and the Si K-edge. It is found that, under favourable conditions, single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The M3,2 edge exhibits XANES features very similar to those of the Pt L3,2 edge obtained from the samples. The analysis of the Pt M3,2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation. |
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| Publication date | 1997-04 |
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| Language | English |
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| NPARC number | 12338956 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3806cd7b-ade9-40fe-a580-5fdd99849b89 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-20 |
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