Electrical Properties of InAlP Native Oxides for GaAs- Based MOS Alications
Electrical Properties of InAlP Native Oxides for GaAs- Based MOS Alications
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
|---|---|
| Editor | Search for: Pearton, S.; Search for: Ren, D.; Search for: Buckley, D.; Search for: Chu, S. |
| Format | Text, Article |
| Conference | International Symposia:III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-Of-The-Art Program on Compound Semiconductors SOTAPOCS XXXIV, Pennington, N J |
| Publication date | 2001 |
| Publisher | Electrochem Soc |
| NPARC number | 12346694 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 38d369ce-4759-4a43-9680-22706ca4cba1 |
| Record created | 2009-09-17 |
| Record modified | 2020-03-27 |
- Date modified: