Language selection

Government of Canada / Gouvernement du Canada

Search

Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.2165655
AuthorSearch for: ; Search for: ; Search for: ; Search for: 1; Search for:
Affiliation
  1. National Research Council Canada. Industrial Research Assistance Program
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology A 24, no. 3 (May 2006): 700–703.
NPARC number12744744
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier3ae1ce2b-f8e1-4e16-bcfa-e57c94d03fa7
Record created2009-10-27
Record modified2020-04-22
Date modified: