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Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.2165655
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Affiliation
  1. National Research Council of Canada. Industrial Research Assistance Program
FormatText, Article
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In
  • Journal of Vacuum Science & Technology A 24, no. 3 (May 2006): 700–703.
NPARC number12744744
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Record identifier3ae1ce2b-f8e1-4e16-bcfa-e57c94d03fa7
Record created2009-10-27
Record modified2020-04-22
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