| Abstract | We report an investigation into the impact of applying a large reverse bias voltage during current–voltage (J-V) sweeps on the degradation rate of solar cells based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) and [6-6]-phenyl C71-butyric acid methyl ester (PC70BM), under air mass 1.5 simulated solar irradiation. The degradation rate was found to be significantly slower when devices were characterized using frequent J-V sweeps with a large reverse bias component (-7 V to 1 V), with a decrease in power conversion efficiency of 24% after ∼ 100 hrs of light exposure. In contrast, devices scanned from −1 V to 1 V degrade by 72% in the same time period. The decay in the photovoltaic performance was found to be related to an increase in the series resistance and a decrease in the shunt resistance of the devices over time. Further characterization of the bulk heterojunction layer under irradiation conditions indicates that this behavior might be caused by the decreasing mobility of the charge carriers due to the formation of the defects or traps in the layer, induced by the photo-oxidation process. The frequent application of a large reverse bias sweep most likely helps de-trap the charge carriers and slows down the device degradation. Impedance analysis indicated that during the decay of PCDTBT:PC70BM devices the bulk layer became more resistive with time, and applying large and frequent reverse bias sweeps during testing could significantly slow down this process. The charge carrier extraction time was found to increase from 7 μs to more than 400 μs after photo-degradation. These findings demonstrate that repeated application of a reverse bias voltage can affect device degradation, and therefore that the specific details of J-V characterization should be reported alongside device lifetime claims. |
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