| DOI | Resolve DOI: https://doi.org/10.1109/3.283794 |
|---|
| Author | Search for: Agahi, Farid; Search for: Lau, Kei May; Search for: Koteles, Emil S.1; Search for: Baliga, Arvind; Search for: Anderson, Neal G. |
|---|
| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | III-V semiconductors; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth |
|---|
| Abstract | An investigation of GaAs QW's with tensile-strained GaAsP barriers grown on GaAs substrates by organometallic vapor phase epitaxy is reported. We demonstrate that this system permits light- and heavy-hole valence bands to be approximately merged within a wide range of well widths and strains, thereby increasing the yield of devices requiring these characteristics. A few series of quantum wells with three phosphorus compositions (6%, 9%, and 19%) were grown and studied by photoluminescence and polarized photoluminescence excitation spectroscopy. We compared our experimentally determined conduction band to heavy-hole and light-hole transition energies with finite potential well calculations utilizing a previously developed strain dependent band offset model. We obtained excellent agreement between experimental and calculated results without any adjustment or fitting of parameters |
|---|
| Publication date | 1994-02 |
|---|
| In | |
|---|
| Language | English |
|---|
| NPARC number | 12328459 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 401e21b9-68fd-474e-84fe-c8f49e6cd101 |
|---|
| Record created | 2009-09-10 |
|---|
| Record modified | 2020-04-27 |
|---|
