| DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(96)00571-7 |
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| Author | Search for: Furneaux, J. E.; Search for: Kravchenko, S. V.; Search for: Mason, Whitney; Search for: Pudalov, V. M.; Search for: D'Iorio, M.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995 |
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| Subject | Electrical transport; Metal-oxide-semiconductor (MOS) structures; Silicon |
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| Abstract | The resistivity of a two-dimensional electron system in silicon at low electron densities was empirically found to scale with a single parameter, T0, which approaches zero at some critical electron density, nc, and increases as a power T0 ∞ ns − ncv with v = 1.6 ± 0.1 both in metallic (ns > nc) and insulating (ns < nc) regions. This behavior suggests a true metal/insulator transition in the two-dimensional electron system in silicon at B = 0, in contrast with the well-known scaling theory. |
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| Publication date | 1996-07-20 |
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| Language | English |
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| NPARC number | 12337989 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 43938f37-304f-4bd8-b11c-5075454f39cf |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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