| Download | - View accepted manuscript: 1.53µm GaInNAsSb laser diodes grown on GaAs(100) (PDF, 513 KiB)
|
|---|
| DOI | Resolve DOI: https://doi.org/10.1049/el:20057623 |
|---|
| Author | Search for: Gupta, J. A.1; Search for: Barrios, P. J.1; Search for: Zhang, X.; Search for: Pakulski, G.1; Search for: Wu, X.1 |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Abstract | GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K. |
|---|
| Publication date | 2005-01-20 |
|---|
| In | |
|---|
| Language | English |
|---|
| NPARC number | 12744533 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 44223772-9813-484f-8bf8-e7c7c0b53b62 |
|---|
| Record created | 2009-10-27 |
|---|
| Record modified | 2020-04-07 |
|---|
