The characterization of oxides formed on InP,InGaAs,InAlAs and InGaAs/InAlAs heterostructures at 300-500ºC
The characterization of oxides formed on InP,InGaAs,InAlAs and InGaAs/InAlAs heterostructures at 300-500ºC
DOI | Resolve DOI: https://doi.org/10.1023/A:1015396204143 |
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Author | Search for: ; Search for: 1; Search for: 2; Search for: 1 |
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Format | Text, Article |
Publication date | 2002 |
In | |
NPARC number | 12744875 |
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Record identifier | 44c7b966-b576-471f-82d9-9600c111de7f |
Record created | 2009-10-27 |
Record modified | 2020-03-30 |
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