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Cracking phenomena in In(0.25)Ga(0.75)AS films on InP substrates

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DOIResolve DOI: https://doi.org/10.1016/S1359-6454(99)00211-6
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FormatText, Article
Subjectanalytical electron microscopy; compound semiconductors; fracture
Abstract
The strain relaxation of a series of In0.25Ga0.75As films grown on (100) InP substrates (lattice mismatch=2%) has been studied by electron microscopy. The mechanisms of strain relief (in the first stages of growth) occurred by cracking on (01-1), and by twinning on (111) and (1-11) planes. Cracking was a transitory process with the density of cracks being highest in a 20nm thick film, while a 500nm thick film was crack-free. These results are discussed in the context of different cracking and crack0healing models.
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  • Acta Materialia 47, no. 12 (29 September 1999): 3383–3394.
LanguageEnglish
NRC publication
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NPARC number21276883
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Record identifier4a3e57b6-0160-41c0-beae-b1c4d1b230b8
Record created2015-10-30
Record modified2020-06-04
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