| DOI | Resolve DOI: https://doi.org/10.1109/IVNC.2006.335396 |
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| Author | Search for: Grazulis, L.; Search for: Cahay, M.; Search for: Garre, K.; Search for: Semet, V.; Search for: Binh, Vu-Thien; Search for: Lockwood, David1; Search for: Fraser, Jeffrey1; Search for: Bandyopadhyay, S.; Search for: Pramanik, S.; Search for: Fairchild, S. |
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| Editor | Search for: Xu, N. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 19th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 2006 |
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| Abstract | Successful growth of lanthanum monosulfide (LaS) nanodot and nanowire arrays has been performed by pulsed laser deposition (PLD) using self-assembled nanoporous alumina templates containing pores about 50 nm wide and 200-300 nm deep. The arrays were characterized by X-ray diffraction, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and scanning anode field emission microscopy (SAFEM). The array of LaS nanodots grows selectively at boundaries between different regions of the alumina film with local hexagonal symmetry of pores. The density of these dots is about 109 /cm2. Cross sectional FE-SEM showed that LaS nanowires also grow inside the pores with a density of 1010/cm2 , which is equal to the pore density of the templates. The field emission properties of the LaS nanodots grown on top of the alumina templates were measured using SAFEM. A typical current-voltage characteristic is shown. Using the conventional Fowler-Nordheim relation, the work function of the LaS nanodots has been extracted from the slope of the plot ln(J/F2) vs 1/F, where J is the field emission current density and F is the local applied field. This leads to an outstanding, reproducible effective work function value of ~1 eV for the LaS nanodots. The threshold for an emission current density of 1 mA/cm2 occurs around a 150 V/mum which is considerably lower than the 230 V/mum threshold value reported recently for LaS thin films. |
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| Language | English |
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| Identifier | IEEE Cat 06TH8886 |
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| NPARC number | 12346457 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4b0e4e1a-c0d8-4150-8d5f-b160875b9e1b |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-16 |
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