| DOI | Resolve DOI: https://doi.org/10.1557/PROC-427-541 |
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| Author | Search for: Das, S. R.1; Search for: Xu, D.-X.1; Search for: Nournia, M.1; Search for: Lebrun, L.1; Search for: Naem, A. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1996 MRS Spring Meeting: Symposium K: Advanced Metallization for Future ULSI, April 8-12, 1996, San Francisco, CA, USA |
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| Abstract | In view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness. |
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| Publication date | 1996 |
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| Language | English |
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| NPARC number | 12328208 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4b112de2-8384-4fda-9c99-b1fc920ebc13 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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