Language selection

Government of Canada / Gouvernement du Canada

Search

Anodic Passivation of p-InP (100) in (NH[sub 4])[sub 2]S[sub x] Solution

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/1.2043966
AuthorSearch for: ; Search for: 1; Search for: 1; Search for: 1; Search for:
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectanodised layers; dissolving; electrochemistry; III-V semiconductors; passivation; precipitation (physical chemistry); surface composition
Abstract
p-InP (100) was electrochemically sulfur passivated in (NH4)2Sx solution, and the resulting surfaces analyzed by XPS, AES, and SEM.It was found that one monolayer of sulfur adsorbed on the InP surface at potentials below 0.3 V (vs. SCE); while at potentials above 0.3 V,a 3-dimensional In2S3 layer was formed. Conditions for preparation of a continuous, 150 nm thick In2S3 passivating layer have beendetermined.
Publication date
In
  • Journal of The Electrochemical Society 142, no. 1 (January 1995): L14–L16.
LanguageEnglish
Peer reviewedYes
NPARC number12339060
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier4b5c9c1f-12a8-490b-ac10-23c00530ba4d
Record created2009-09-11
Record modified2020-04-29
Date modified: