Strain Relaxation of GaNyAs1-y Films on 100 GaAs Substrates Studied by Transmission Electron Microscopy
Strain Relaxation of GaNyAs1-y Films on 100 GaAs Substrates Studied by Transmission Electron Microscopy
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Format | Text, Article |
Conference | Microscopy & Microanalysis 2005, 38565, Honolulu, USA |
NPARC number | 12346602 |
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Record identifier | 4e720902-a624-49af-a167-e5e1957cd6c3 |
Record created | 2009-09-17 |
Record modified | 2020-04-16 |
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